參數(shù)資料
型號： MTB2P50ET4
廠商： MOTOROLA INC
元件分類： JFETs
英文描述： 2 A, 500 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET
文件頁數(shù)： 7/10頁
文件大?。?/td> 273K
代理商： MTB2P50ET4
MTB2P50E
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAIN-T
O-SOURCE
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
0.1
1
1000
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
10
A
V
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0
25
50
75
100
125
10
VGS = 20 V
SINGLE PULSE
TC = 25°C
80
ID = 2 A
1
100
150
t, TIME (ms)
Figure 13. Thermal Response
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
R
θJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
0
0.5
1
1.5
2.0
2.5
3
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
Figure 15. D2PAK Power Derating Curve
RθJA = 50°C/W
Board material = 0.065 mil FR–4
Mounted on the minimum recommended footprint
Collector/Drain Pad Size
≈ 450 mils x 350 mils
60
40
20
1
0.1
0.01
1.0E–05
1.0E–04
1.0E–03
1.0E–02
1.0E–01
1.0E+00
1.0E+01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
10
s
100
s
1 ms
10 ms
dc
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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MTB30HAM 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Full-Size (7.3mm or 4.7mm height)
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