參數(shù)資料
型號(hào)： MTB2P50ET4
廠商： MOTOROLA INC
元件分類： JFETs
英文描述： 2 A, 500 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET
文件頁數(shù)： 4/10頁
文件大?。?/td> 273K
代理商： MTB2P50ET4
MTB2P50E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
4
8
12
16
28
0
1
2
3
4
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
2
3
4
5
6
7
0
1
2
3
4
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
0.5
1.5
2.5
3.5
4
0
4
6
8
10
0
0.5
1.5
2.5
3.5
4
4.5
5
5.5
6
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0.5
1
1.5
2
0
100
200
300
400
500
1
10
100
1000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
VDS ≥ 10 V
TJ = – 55°C
25
°C
100
°C
TJ = 100°C
TJ = 25°C
VGS = 0 V
VGS = 10 V
ID = 1 A
20
24
7 V
8 V
6 V
5 V
4 V
3.5
2.5
1.5
0.5
3.5
2.5
1.5
0.5
2.5
3.5
4.5
5.5
6.5
25
°C
– 55
°C
2
1
2
3
5.75
5.25
4.75
4.25
1
2
3
VGS = 10 V
15 V
– 50
– 25
0
50
25
75
100
125
150
50
150
250
350
450
TJ = 125°C
25
°C
100
°C
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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MTB30HAM 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Full-Size (7.3mm or 4.7mm height)
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