參數(shù)資料
型號(hào): MTB2N40ET4
廠(chǎng)商: MOTOROLA INC
元件分類(lèi): JFETs
英文描述: 2 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù): 7/10頁(yè)
文件大?。?/td> 271K
代理商: MTB2N40ET4
MTB2N40E
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
0
0.5
1
1.5
2.0
2.5
3
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
Figure 15. D2PAK Power Derating Curve
RθJA = 50°C/W
Board material = 0.065 mil FR–4
Mounted on the minimum recommended footprint
Collector/Drain Pad Size
≈ 450 mils x 350 mils
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 13. Thermal Response
,SINGLE
PULSE
DRAIN–T
O–SOURCE
AS
E
TJ, STARTING JUNCTION TEMPERATURE (°C)
A
V
ALANCHE
ENERGY
(mJ)
ID = 2 A
45
35
25
5
0
25
50
75
100
125
150
10
1
0.1
0.01
0.1
1
10
100
1000
100
s
10
s
1 ms
10 ms
dc
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
VGS = 20 V
SINGLE PULSE
TC = 25°C
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t, TIME (SECONDS)
D = 0.5
0.2
r
(t)
,EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.1
0.05
0.02
0.01
R
θJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
10
15
20
30
40
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