- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄96090 > MTB2N40ET4 (MOTOROLA INC) 2 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MTB2N40ET4 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 2 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 271K |
| 代理商： | MTB2N40ET4 |
MTB2N40E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
400
—
451
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 400 Vdc, VGS = 0 Vdc)
(VDS = 400 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
10
100
Adc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
—
3.2
7.0
4.0
—
Vdc
mV/
°C
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 1.0 Adc)
RDS(on)
—
3.1
3.5
Ohm
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 2.0 Adc)
(VGS = 10 Vdc, ID = 1.0 Adc, TJ = 125°C)
VDS(on)
—
7.3
—
8.4
7.4
Vdc
Forward Transconductance (VDS = 50 Vdc, ID = 1.0 Adc)
gFS
0.5
1.0
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
—
229
320
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
34
40
Transfer Capacitance
f = 1.0 MHz)
Crss
—
7.3
10
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(VDD = 200 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc,
RG = 9.1 )
td(on)
—
8.0
16
ns
Rise Time
(VDD = 200 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc,
RG = 9.1 )
tr
—
8.4
14
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
—
12
26
Fall Time
G = 9.1 )
tf
—
11
20
Gate Charge
(See Figure 8)
(VDS = 320 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
QT
—
8.6
12
nC
(See Figure 8)
(VDS = 320 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
Q1
—
2.6
—
(VDS = 320 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
Q2
—
3.2
—
Q3
—
5.0
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 2.0 Adc, VGS = 0 Vdc )
(IS = 2.0 Adc, VGS = 0 Vdc , TJ = 125°C)
VSD
—
0.88
0.76
1.2
—
Vdc
Reverse Recovery Time
(See Figure 14)
(IS = 2.0 Adc, VGS = 0 Vdc,
dlS/dt = 100 A/s)
trr
—
156
—
ns
(See Figure 14)
(IS = 2.0 Adc, VGS = 0 Vdc,
dlS/dt = 100 A/s)
ta
—
99
—
(IS = 2.0 Adc, VGS = 0 Vdc,
dlS/dt = 100 A/s)
tb
—
57
—
Reverse Recovery Stored Charge
QRR
—
0.89
—
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTB2N60ET4 | 2 A, 600 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB2N60ET4 | 2 A, 600 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB2P50ET4 | 2 A, 500 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MTB30N06VLT4 | 30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB30N06VL | 30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTB2N60E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 2.0 AMPERES 600 VOLTS |
| MTB2P50E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 2.0 AMPERES 500 VOLTS |
| MTB2P50ET4 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK |
| MTB2P50ET4G | 功能描述:MOSFET PFET 500V 2A 6O RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTB306D | 功能描述:撥動(dòng)開關(guān) 3PDT TOGGLE SWITCH Long Bat Actuator RoHS:否 制造商:C&K Components 觸點(diǎn)形式:DPDT 開關(guān)功能:ON - ON - ON 電流額定值: 電壓額定值 AC:20 V 電壓額定值 DC:20 V 功率額定值:0.4 VA 端接類型:V-Bracket 安裝風(fēng)格: 端子密封:Epoxy 觸點(diǎn)電鍍:Gold 照明:Not Illuminated |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。