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參數(shù)資料
| 型號： | MTB1N100ET4 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 1 A, 1000 V, 9 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 256K |
| 代理商： | MTB1N100ET4 |
MTB1N100E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
0
4
8
12
16
20
2.0
1.4
2
6
10
14
18
0.6
5 V
6 V
VGS = 10 V
VDS ≥ 10 V
2.0
2.8
3.6
4.4
5.2
2.4
3.2
4.0
4.8
TJ = –55°C
25
°C
100
°C
TJ = 25°C
VGS = 10 V
15 V
6.0
7.2
8.0
6.6
0
0.4
1.6
0.2
1.4
1.8
VGS = 0 V
0
200
400
0.01
100
10000
100
300
600
1.0
500
25
°C
100
°C
TJ = 125°C
0
0.4
1.2
1.6
0
4
8
16
10
6
2
0.8
2.0
25
°C
– 55
°C
12
VGS = 10 V
–50
0
0.8
1.2
2.0
2.8
–25
0
25
50
75
100
125
150
VGS = 10 V
ID = 0.5 A
4 V
1.8
1.0
0.2
1000
7.0
7.4
7.6
6.8
6.4
0.6
1.0
0.8
1.2
2.0
2.4
1.6
1.2
0.4
1.6
0.8
0
2.0
1.4
0.6
1.8
1.0
0.2
1.2
0.4
1.6
0.8
0
5.6
14
0.2
0.6
1.4
1.8
1.0
7.8
6.2
10
0.1
800
700
1000
900
0.4
TJ = 100°C
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