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參數(shù)資料
| 型號(hào)： | MTB10N60E7 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D2PAK-3 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 181K |
| 代理商： | MTB10N60E7 |
MTB10N60E7
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
600
—
700
—
Vdc
mV/
°C
Zero Gate Voltage Collector Current
(VDS = 600 Vdc, VGS = 0 Vdc)
(VDS = 600 Vdc, VGS = 0 Vdc, TJ =125°C)
IDSS
—
10
100
Adc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS(f)
IGSS(r)
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
ID = 0.25 mA, VDS = VGS
Temperature Coefficient (Negative)
VGS(th)
2.0
—
2.8
7.1
4.0
—
Vdc
mV/
°C
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 5 Adc)
RDS(on)
—
0.58
0.75
Ohm
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 10 Vdc, ID = 5 Adc, TJ = 125°C)
VDS(on)
—
9.0
7.9
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 5 Adc)
gFS
3.0
9.0
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0 Vd
Ciss
—
3300
4620
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
190
270
Transfer Capacitance
f
1.0 MHz)
Crss
—
4.0
10
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
td(on)
—
20
40
ns
Rise Time
(VDD = 300 Vdc, ID = 10 Adc,
VGS =10Vdc
tr
—
28
60
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
—
58
120
Fall Time
G
tf
—
36
70
Gate Charge
QT
—
41
60
nC
(VDS = 400 Vdc, ID = 10 Adc,
Q1
—
13
—
( DS
D
VGS = 10 Vdc)
Q2
—
6.8
—
Q3
—
20
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(1)
(IS = 10 Adc, VGS = 0 Vdc)
(IS = 10 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
0.83
0.7
1.0
—
Vdc
Reverse Recovery Time
trr
—
485
—
ns
(IS = 10 Adc VGS = 0 Vdc
ta
—
158
—
(IS = 10 Adc, VGS = 0 Vdc,
diS/dt = 100 A/s)
tb
—
327
—
Reverse Recovery Stored
Charge
QRR
—
4.0
—
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25
″ from package to center of die)
LD
—
3.5
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
—
7.5
—
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
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