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參數(shù)資料
| 型號(hào)： | MT6L61AT |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | 2-2JA1C, 6 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 81K |
| 代理商： | MT6L61AT |
MT6L61AT
2003-09-19
2
Electrical Characteristics Q1-Side (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 5 V, IE = 0
0.1
A
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
1
A
DC current gain
hFE
VCE = 1 V, IC = 5 mA
70
140
Transition frequency
fT
VCE = 3 V, IC = 10 mA
10
12
GHz
S21e
2 (1)
VCE = 1 V, IC = 5 mA, f = 2 GHz
6.5
Insertion gain
S21e
2 (2)
VCE = 3 V, IC = 15 mA, f = 2 GHz
4
7
dB
NF (1)
VCE = 1 V, IC = 5 mA, f = 2 GHz
1.6
3
Noise figure
NF (2)
VCE = 3 V, IC = 5 mA, f = 2 GHz
1.5
3
dB
Reverse transfer capacitance
Cre
VCB = 1 V, IE = 0, f = 1 MHz
(Note2)
0.45
0.85
pF
Electrical Characteristics Q2-Side (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 5 V, IE = 0
0.1
A
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
1
A
DC current gain
hFE
VCE = 1 V, IC = 5 mA
80
160
fT (1)
VCE = 1 V, IC = 5 mA
2
4.5
Transition frequency
fT (2)
VCE = 3 V, IC = 7 mA
5
7
GHz
S21e
2 (1)
VCE = 1 V, IC = 5 mA, f = 1 GHz
8.5
Insertion gain
S21e
2 (2)
VCE = 3 V, IC = 20 mA, f = 1 GHz
7.5
11
dB
NF (1)
VCE = 1 V, IC = 5 mA, f = 1 GHz
1.3
2.2
Noise figure
NF (2)
VCE = 3 V, IC = 7 mA, f = 1 GHz
1.2
2
dB
Reverse transfer capacitance
Cre
VCB = 1 V, IE = 0, f = 1 MHz
(Note2)
0.9
1.25
pF
Note2: Cre is measured by 3 terminal method with capacitance bridge.
Marking
Pin Assignment (top view)
Caution
This device electrostatic sensitivity. Please handle with caution.
B1
B2
C1
E1
C2
Q1
Q2
E2
T E
4
6
3
1
2
5
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| MT6L63FS | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:VHF~UHF Band Low-Noise Amplifier Applications |
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| MT6L72FS | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:VHF~UHF Band Low-Noise Amplifier Applications |
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