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參數(shù)資料
| 型號： | MT6L62AE |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | 2-2N1C, 6 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 174K |
| 代理商： | MT6L62AE |
MT6L62AE
2010-02-24
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT6L62AE
VHF-UHF Band Low Noise Amplifier Application
VHF-UHF Band Oscillator Application
Mounted Devices
Q1
Q2
Three pin SSM type part No.
MT3S07S
MT3S03AS
Absolute Maximum Ratings (Ta = 25°C)
Rating
Characteristics
Symbol
Q1
Q2
Unit
Collector-base voltage
VCBO
10
V
Collector-emitter voltage
VCEO
5
V
Emitter-base voltage
VEBO
1.5
2
V
Collector current
IC
25
40
mA
Base current
IB
10
mA
Collector power dissipation
PC
(Note1)
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1: Total power dissipation of Q1 and Q2
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2N1C
Weight: 3 mg (typ.)
ES6
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