- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369933 > MT5C2561 (Austin Semiconductor, Inc) MT5C2561 SRAM MEMORY ARRAY PDF資料下載
參數(shù)資料
| 型號： | MT5C2561 |
| 廠商： | Austin Semiconductor, Inc |
| 英文描述： | MT5C2561 SRAM MEMORY ARRAY |
| 中文描述： | MT5C2561的SRAM內(nèi)存陣列 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 129K |
| 代理商： | MT5C2561 |
SRAM
MT5C2561
Austin Semiconductor, Inc.
MT5C2561
Rev. 2.5 1/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
FEATURES
High Speed: 35, 45, 55, and 70
Battery Backup: 2V data retention
Low power standby
High-performance, low-power, CMOS double-metal
process
Single +5V (+10%) Power Supply
Easy memory expansion with CE\
All inputs and outputs are TTL compatible
OPTIONS
Timing
35ns access
45ns access
55ns access
70ns access
MARKING
-35
-45
-55*
-70*
Package(s)
Ceramic DIP (300 mil)
Ceramic LCC
C
EC
No. 106
No. 204
Operating Temperature Ranges
Industrial (-40
o
C to +85
o
C)
Military (-55
o
C to +125
o
C)
IT
XT
2V data retention/low power
L
*Electrical characteristics identical to those provided for the 45ns
access devices.
PIN ASSIGNMENT
(Top View)
AVAILABLE AS MILITARY
SPECIFICATIONS
SMD 5962-88725
SMD 5962-88544
MIL-STD-883
24-Pin DIP (C)
(300 MIL)
GENERAL DESCRIPTION
The Austin Semiconductor SRAM family employs
high-speed, low-power CMOS and are fabricated using double-
layer metal, double-layer polysilicon technology.
For flexibility in high-speed memory applications,
Austin Semiconductor offers chip enable (CE\) on all organiza-
tions. This enhancement can place the outputs in High-Z for
additional flexibility in system design. The x1 configuration
features separate data input and output.
Writing to these devices is accomplished when write
enable (WE\) and CE\ inputs are both LOW. Reading is accom-
plished when WE\ remains HIGH and CE\ goes LOW. The
device offers a reduced power standby mode when disabled.
This allows system designs to achieve low standby power re-
quirements.
These devices operate from a single +5V power sup-
ply and all inputs and outputs are fully TTL compatible.
256K x 1 SRAM
SRAM MEMORY ARRAY
For more products and information
please visit our web site at
www.austinsemiconductor.com
28-Pin LCC (EC)
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
A6
A7
A8
A9
A10
A11
A14
A15
A0
Q
WE\
Vss
Vcc
A5
A4
A3
A2
A1
A17
A16
A13
A12
D
CE\
3 2 1 28 27
13 14 15 16 17
V
W
4
5
6
7
8
9
10
11
12
26
25
24
23
22
21
20
19
18
A9
A0
Q
NC
NC
A
D
C
A
A
A
V
A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MT5C6401 | 64K x 1 SRAM SRAM MEMORY ARRAY |
| MT6C03AE | TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
| MT6C04AE | VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
| MT6L03AT | TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
| MT6L03AE | TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT5C2564C-20/883C | 制造商:Micross Components, Inc. 功能描述:SRAM, 256KB - Rail/Tube |
| MT5C2564C-20/IT | 制造商:Micross Components 功能描述:SRAM, 256KB - Rail/Tube |
| MT5C2564C-20/XT | 制造商:Micross Components 功能描述:SRAM, 256KB - Rail/Tube |
| MT5C2564C-20L/883C | 制造商:Micross Components 功能描述:SRAM, 256KB - Rail/Tube |
| MT5C2564C-20L/IT | 制造商:Micross Components 功能描述:SRAM, 256KB - Rail/Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。