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參數(shù)資料
| 型號： | MT4S100T |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, 2-1G1B, TESQ, 4 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 130K |
| 代理商： | MT4S100T |
MT4S100T
2007-11-01
2
Microwave Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition Frequency
fT
VCE=2V, IC=10mA, f=2GHz
19
23
GHz
Insertion Gain
|S21e|
2
VCE=2V, IC=10mA, f=2GHz
14
17.0
dB
Noise Figure
NF
VCE=2V, IC=5mA, f=2GHz
0.72
1.0
dB
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector Cut-off Current
ICBO
VCB=6V, IE=0
1
A
Emitter Cut-off Current
IEBO
VEB=1V, IC=0
1
A
DC Current Gain
hFE
VCE=2V, IC=10mA
200
400
-
Output Capacitance
Cob
VCB=2V, IE=0, f=1MHz
0.41
0.6
pF
Reverse Transfer Capacitance
Cre
VCB=2V, IE=0, f=1MHz (Note 1)
0.14
0.2
pF
Note 1: Cre is measured by 3 terminal method with capacitance bridge.
Caution:
This device is sensitive to electrostatic discharge due to applied the high frequency transistor
process of fT=60GHz class is used for this product.
Please make enough tool and equipment earthed when you handle.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT4S100T_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:UHF Low Noise Amplifier Application |
| MT4S100U | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:UHF LOW NOISE AMPLIFIER APPLICATION |
| MT4S101T | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:UHF Low Noise Amplifier Application |
| MT4S101T_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:UHF Low Noise Amplifier Application |
| MT4S102T | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:UHF-SHF Low Noise Amplifier Application |
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