參數(shù)資料
型號: MT4LC16M4T8TG-6S
廠商: Micron Technology, Inc.
英文描述: DRAM
中文描述: 內(nèi)存
文件頁數(shù): 5/20頁
文件大?。?/td> 350K
代理商: MT4LC16M4T8TG-6S
5
16 Meg x 4 FPM DRAM
D21_2.p65 – Rev. 5/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
16 MEG x 4
FPM DRAM
I
CC
OPERATING CONDITIONS AND MAXIMUM LIMITS
(Notes: 1, 2, 3, 5, 6) (V
CC
= +3.3V ±0.3V)
4K
8K
PARAMETER/CONDITION
STANDBY CURRENT: TTL
(RAS# = CAS# = V
IH
)
STANDBY CURRENT: CMOS
(RAS# = CAS#
V
CC
- 0.2V, DQs may be left open,
other inputs: V
IN
V
CC
- 0.2V or V
IN
0.2V)
OPERATING CURRENT: Random READ/WRITE
Average power supply current
(RAS#, CAS#, address cycling:
t
RC =
t
RC [MIN])
OPERATING CURRENT: FAST PAGE MODE
Average power supply current (RAS# = V
IL
,
CAS#, address cycling:
t
PC =
t
PC [MIN])
REFRESH CURRENT: RAS#-ONLY
Average power supply current
(RAS# cycling, CAS# = V
IH
:
t
RC =
t
RC [MIN])
REFRESH CURRENT: CBR
Average power supply current
(RAS#, CAS#, address cycling:
t
RC =
t
RC [MIN])
REFRESH CURRENT: Extended (“S” version only)
Average power supply current: CAS# = 0.2V or
CBR cycling; RAS# =
t
RAS (MIN); WE# = V
CC
- 0.2V;
A0-A11, OE# and D
IN
= V
CC
- 0.2V or 0.2V
(D
IN
may be left open)
REFRESH CURRENT: Self (“S” version only)
Average power supply current: CBR with
RAS#
t
RASS (MIN) and CAS# held LOW;
WE# = V
CC
- 0.2V; A0-A11, OE# and D
IN
=
V
CC
- 0.2V or 0.2V (D
IN
may be left open)
SYMBOL
I
CC
1
SPEED
ALL
REFRESH REFRESH UNITS NOTES
1
1
mA
I
CC
2
ALL
500
500
μA
I
CC
3
-5
-6
170
160
130
120
mA
25
I
CC
4
-5
-6
100
90
100
90
mA
25
I
CC
5
-5
-6
170
160
130
120
mA
22
I
CC
6
-5
-6
170
160
130
120
mA
4, 7
I
CC
7
ALL
400
400
μA
4, 7
I
CC
8
ALL
400
400
μA
4, 7
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