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參數(shù)資料
| 型號： | MT4LC16M4T8TG-6S |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | DRAM |
| 中文描述： | 內(nèi)存 |
| 文件頁數(shù)： | 2/20頁 |
| 文件大小： | 350K |
| 代理商： | MT4LC16M4T8TG-6S |
2
16 Meg x 4 FPM DRAM
D21_2.p65 – Rev. 5/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
16 MEG x 4
FPM DRAM
FUNCTIONAL BLOCK DIAGRAM
MT4LC16M4A7 (13 row addresses)
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
RAS#
13
13
NO. 2 CLOCK
GENERATOR
REFRESH
CONTROLLER
NO. 1 CLOCK
GENERATOR
V
DD
V
SS
13
WE#
CAS#
11
CONTROL
LOGIC
COLUMN-
ADDRESS
BUFFER(11)
ROW-
ADDRESS
BUFFERS (13)
8,192
2,048
COLUMN
DECODER
OE#
DQ0
DQ1
DQ2
DQ3
4
4
4
4
REFRESH
COUNTER
R
R
D
2,048
SENSE AMPLIFIERS
I/O GATING
DATA-OUT
BUFFER
DATA-IN
BUFFER
8,192 x 2,048 x 4
MEMORY
ARRAY
C
S
8,192
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
RAS#
12
12
12
NO. 2 CLOCK
GENERATOR
REFRESH
CONTROLLER
NO. 1 CLOCK
GENERATOR
V
DD
V
SS
12
WE#
CAS#
12
CONTROL
LOGIC
COLUMN-
ADDRESS
BUFFER(12)
ROW-
ADDRESS
BUFFERS (12)
4,096
4,096
COLUMN
DECODER
OE#
DQ0
DQ1
DQ2
DQ3
4
4
4
4
REFRESH
COUNTER
R
R
D
4,096
SENSE AMPLIFIERS
I/O GATING
DATA-OUT
BUFFER
DATA-IN
BUFFER
4,096 x 4,096 x 4
MEMORY
ARRAY
C
S
4,096
FUNCTIONAL BLOCK DIAGRAM
MT4LC16M4T8 (12 row addresses)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT4LC1M16C3DJ-6 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:FPM DRAM |
| MT4LC1M16C3DJ-6S | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:FPM DRAM |
| MT4LC1M16C3TG6 | 制造商:Micron Technology Inc 功能描述: |
| MT4LC1M16C3TG-6 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:FPM DRAM |
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