參數(shù)資料
型號: MT4JSF6464HY-1G4XX
元件分類: DRAM
英文描述: 64M X 64 DDR DRAM MODULE, ZMA204
封裝: LEAD FREE, SODIMM-204
文件頁數(shù): 9/19頁
文件大小: 618K
代理商: MT4JSF6464HY-1G4XX
PDF: 09005aef82b2f090/Source: 09005aef82b2f012
Micron Technology, Inc., reserves the right to change products or specifications without notice.
JSF4C64_64x64HY.fm - Rev. B 3/08 EN
17
2007 Micron Technology, Inc. All rights reserved
512MB (x64, SR) 204-Pin DDR3 SDRAM SODIMM
Temperature Sensor with Serial Presence-Detect EEPROM
Temperature Format
The temperature trip point registers and temperature readout register use a
“2’s complement” format to enable negative numbers. The least significant bit (LSB) is
equal to 0.0625°C or 0.25°C depending on which register is referenced. As an example,
assuming an LSB of 0.0625°C:
A value of 0x018C would equal 24.75°C
A value of 0x06C0 would equal 108°C
A value of 0x1E74 would equal –24.75°C
Temperature Trip Point Registers
The upper and lower temperature boundary registers are used to set the maximum and
minimum values of the alarm window. LSB for these registers is 0.25°C. All RFU bits in
the register will always report zero.
Critical Temperature Register
The critical temperature register is used to set the maximum temperature above the
alarm window. The LSB for this register is 0.25°C. All RFU bits in the register will always
report zero.
Table 19:
Hysteresis
Condition
Below Alarm Window Bit
Above Alarm Window Bit
Temperature
Gradient
Critical Temperature
Temperature
Gradient
Critical Temperature
Sets
Falling
TL - Hyst
Rising
TH
Clears
Rising
TL
Falling
TH - Hyst
Table 20:
Alarm Temperature Lower Boundary Register (Address: 0x02)
Bit
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
00
0
MSB
LSB
RFU
Alarm window upper boundary temperature
Table 21:
Alarm Temperature Lower Boundary Register (Address: 0x03)
Bit
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
00
0
MSB
LSB
RFU
Alarm window lower boundary temperature
Table 22:
Critical Temperature Register (Address: 0x04)
Bit
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
00
0
MSB
LSB
RFU
Critical temperature trip point
相關(guān)PDF資料
PDF描述
MT4LC16M4A7DJ-6S 16M X 4 FAST PAGE DRAM, 60 ns, PDSO32
MT58L128L36P1T-5 128K X 36 CACHE SRAM, 2.8 ns, PQFP100
MT58L512Y36FT-8.5 512K X 36 CACHE SRAM, 8.5 ns, PQFP100
MT58V1MV18DT-10 1M X 18 CACHE SRAM, 5 ns, PQFP100
MT5C2565EC-70/IT 64K X 4 STANDARD SRAM, 70 ns, CQCC28
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT4JTF12864AZ-1G1D1 功能描述:MOD DDR3 SDRAM 1GB 240UDIMM RoHS:是 類別:存儲卡,模塊 >> 存儲器 - 模塊 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點:- 封裝/外殼:168-DIMM
MT4JTF12864AZ-1G1DZES 制造商:Micron Technology Inc 功能描述:1GB 128MX64 DDR3 SDRAM MODULE COMMERCIAL PBF DIMM GREEN 1.5V - Trays
MT4JTF12864AZ-1G4D1 功能描述:MOD DDR3 SDRAM 1GB 240UDIMM RoHS:是 類別:存儲卡,模塊 >> 存儲器 - 模塊 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點:- 封裝/外殼:168-DIMM
MT4JTF12864AZ-1G4DZES 制造商:Micron Technology Inc 功能描述:1GB 128MX64 DDR3 SDRAM MODULE COMMERCIAL PBF DIMM GREEN 1.5V - Trays
MT4JTF12864AZ-1G6D1 功能描述:MOD DDR3 SDRAM 1GB 240UDIMM RoHS:是 類別:存儲卡,模塊 >> 存儲器 - 模塊 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點:- 封裝/外殼:168-DIMM