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參數(shù)資料
| 型號(hào)： | MT4JSF6464HIY-80BXX |
| 元件分類： | DRAM |
| 英文描述： | 64M X 64 DDR DRAM MODULE, ZMA204 |
| 封裝： | LEAD FREE, SODIMM-204 |
| 文件頁數(shù)： | 9/19頁 |
| 文件大小： | 618K |
| 代理商： | MT4JSF6464HIY-80BXX |
PDF: 09005aef82b2f090/Source: 09005aef82b2f012
Micron Technology, Inc., reserves the right to change products or specifications without notice.
JSF4C64_64x64HY.fm - Rev. B 3/08 EN
17
2007 Micron Technology, Inc. All rights reserved
512MB (x64, SR) 204-Pin DDR3 SDRAM SODIMM
Temperature Sensor with Serial Presence-Detect EEPROM
Temperature Format
The temperature trip point registers and temperature readout register use a
“2’s complement” format to enable negative numbers. The least significant bit (LSB) is
equal to 0.0625°C or 0.25°C depending on which register is referenced. As an example,
assuming an LSB of 0.0625°C:
A value of 0x018C would equal 24.75°C
A value of 0x06C0 would equal 108°C
A value of 0x1E74 would equal –24.75°C
Temperature Trip Point Registers
The upper and lower temperature boundary registers are used to set the maximum and
minimum values of the alarm window. LSB for these registers is 0.25°C. All RFU bits in
the register will always report zero.
Critical Temperature Register
The critical temperature register is used to set the maximum temperature above the
alarm window. The LSB for this register is 0.25°C. All RFU bits in the register will always
report zero.
Table 19:
Hysteresis
Condition
Below Alarm Window Bit
Above Alarm Window Bit
Temperature
Gradient
Critical Temperature
Temperature
Gradient
Critical Temperature
Sets
Falling
TL - Hyst
Rising
TH
Clears
Rising
TL
Falling
TH - Hyst
Table 20:
Alarm Temperature Lower Boundary Register (Address: 0x02)
Bit
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
00
0
MSB
LSB
RFU
Alarm window upper boundary temperature
Table 21:
Alarm Temperature Lower Boundary Register (Address: 0x03)
Bit
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
00
0
MSB
LSB
RFU
Alarm window lower boundary temperature
Table 22:
Critical Temperature Register (Address: 0x04)
Bit
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
00
0
MSB
LSB
RFU
Critical temperature trip point
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT4JSF6464HY-1G1B1 | 制造商:Micron Technology Inc 功能描述:DRAM Module DDR3 SDRAM 512MByte 204SODIMM Tray |
| MT4JSF6464HY-1G1B1 TR | 制造商:Micron Technology Inc 功能描述:512MB 64MX64 DDR3 SDRAM MODULE PBF SODIMM 1.5V NON BUF - Tape and Reel |
| MT4JSF6464HY-1G4B1 | 功能描述:MOD DDR3 SDRAM 512MB 204-SODIMM RoHS:是 類別:存儲(chǔ)卡，模塊 >> 存儲(chǔ)器 - 模塊 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 存儲(chǔ)器類型:SDRAM 存儲(chǔ)容量:1GB 速度:133MHz 特點(diǎn):- 封裝/外殼:168-DIMM |
| MT4JTF12864AZ-1G1D1 | 功能描述:MOD DDR3 SDRAM 1GB 240UDIMM RoHS:是 類別:存儲(chǔ)卡，模塊 >> 存儲(chǔ)器 - 模塊 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 存儲(chǔ)器類型:SDRAM 存儲(chǔ)容量:1GB 速度:133MHz 特點(diǎn):- 封裝/外殼:168-DIMM |
| MT4JTF12864AZ-1G1DZES | 制造商:Micron Technology Inc 功能描述:1GB 128MX64 DDR3 SDRAM MODULE COMMERCIAL PBF DIMM GREEN 1.5V - Trays |
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