
1 Meg x 4 EDO DRAM
D23.pm5 – Rev. 3/97
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1997, Micron Technology, Inc.
5
1 MEG x 4
EDO DRAM
OBSOLETE
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 10, 11, 12, 20) (V
CC
= +5V
±
10%)
AC CHARACTERISTICS
PARAMETER
Access time from column address
Column address setup to CAS# precharge during WRITE
Column address hold time (referenced to RAS#)
Column address setup time
Row address setup time
Access time from CAS#
Column address hold time
CAS# pulse width
CAS# hold time (CBR REFRESH)
CAS# to output in Low-Z
Data output hold after CAS# LOW
CAS# precharge time
Access time from CAS# precharge
CAS# to RAS# precharge time
CAS# hold time
CAS# setup time (CBR REFRESH)
Write command to CAS# lead time
Data-in hold time
Data-in setup time
Output buffer turn-off delay
EDO-PAGE-MODE READ or WRITE cycle time
Access time from RAS#
RAS# to column address delay time
Row address hold time
RAS# pulse width
-6
SYM
t
AA
t
ACH
t
AR
t
ASC
t
ASR
t
CAC
t
CAH
t
CAS
t
CHR
t
CLZ
t
COH
t
CP
t
CPA
t
CRP
t
CSH
t
CSR
t
CWL
t
DH
t
DS
t
OFF
t
PC
t
RAC
t
RAD
t
RAH
t
RAS
MIN
MAX
30
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
15
45
0
0
17
10
13
10
3
5
10
10,000
4
13
35
10
50
10
15
9
0
3
26
4
19
19
17
15
60
15
10
60
15
10,000
CAPACITANCE
PARAMETER
Input Capacitance: A0-A9
Input Capacitance: RAS#, CAS#, WE#, OE#
Input/Output Capacitance: DQ
SYMBOL
C
I
1
C
I
2
C
IO
MAX
5
7
7
UNITS
pF
pF
pF
NOTES
2
2
2