參數(shù)資料
型號： MT48LC32M8A2
廠商： Micron Technology, Inc.
英文描述： SYNCHRONOUS DRAM
中文描述： 同步DRAM
文件頁數(shù)： 11/62頁
文件大?。?/td> 1517K
代理商： MT48LC32M8A2
11
256Mb: x4, x8, x16 SDRAM
256MSDRAM_E.p65
–
Rev. E; Pub. 3/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
256Mb: x4, x8, x16
SDRAM
BALL DESCRIPTIONS
60-BALL FBGA
SYMBOL
TYPE
DESCRIPTION
K2
CLK
Input
Clock: CLK is driven by the system clock. All SDRAM input signals are sampled
on the positive edge of CLK. CLK also increments the internal burst counter
and controls the output registers.
Clock Enable: CKE activates (HIGH) and deactivates (LOW) the CLK signal.
Deactivating the clock provides PRECHARGE POWER-DOWN and SELF REFRESH
operation (all banks idle), ACTIVE POWER-DOWN (row active in any bank) or
CLOCK SUSPEND operation (burst/access in progress). CKE is synchronous except
after the device enters power-down and self refresh modes, where CKE
becomes asynchronous until after exiting the same mode. The input buffers,
including CLK, are disabled during power-down and self refresh modes,
providing low standby power. CKE may be tied HIGH.
Chip Select: CS# enables (registered LOW) and disables (registered HIGH) the
command decoder. All commands are masked when CS# is registered HIGH. CS#
provides for external bank selection on systems with multiple banks. CS# is
considered part of the command code.
Command Inputs: CAS#, RAS#, and WE# (along with CS#) define the
command being entered.
Input/Output Mask: DQM is sampled HIGH and is an input mask signal for
write accesses and an output enable signal for read accesses. Input data is
masked during a WRITE cycle. The output buffers are placed in a High-Z state
(two-clock latency) when during a READ cycle.
Bank Address Input(s): BA0 and BA1 define to which bank the ACTIVE, READ,
WRITE or PRECHARGE command is being applied. These pins also provide the
op-code during a LOAD MODE REGISTER command
Address Inputs: A0
–
A11 are sampled during the ACTIVE command (row-
address A0
–
A11) and READ/WRITE command (column-address A0
–
A8; with A10
defining auto precharge) to select one location out of the memory array in the
respective bank. A10 is sampled during a PRECHARGE command to determine if
all banks are to be precharged (A10 HIGH) or bank selected by BA0, BA1 (LOW).
The address inputs also provide the op-code during a LOAD MODE REGISTER
command.
Data Input/Output: Data bus
Data Input/Output: Data bus
L2
CKE
Input
L8
CS#
Input
J8, K7, J7
CAS#, RAS#,
WE#
DQM,
Input
J2
Input
M8, M7
BA0, BA1
Input
N7, P8, P7, R8, R1, P2, P1,
N2, N1, M2, N8, M1, L1
A0
–
A12
Input
C7, F7, F2, C2
A8, C7, D8, F7, F2, D1, C2,
A1
A1, A8, B1, B8, D1, D2, D7,
D8, E1, E8, G1, G2, G7,
G8, H1, H8, J1, K1, K8, L7
B1, B8, D2, D7, E1, E8, G1,
G2, G7, G8, H1, H8, J1, K1,
K8, L7
B7, C1, E7, F1
DQ0
–
DQ3
DQ0
–
DQ7
(x4) I/O
(x8) I/O
NC
x4
No Connect: These pins should be left unconnected.
G1 is a no connect for this part but may be used as A12 in future designs.
NC
x8
No Connect: These pins should be left unconnected.
G1 is a no connect for this part but may be used as A12 in future designs.
V
DD
Q
Supply
DQ Power: Provide isolated power to DQs for improved noise immunity.
B2, C8, E2, F8
A7, R7
V
SS
Q
V
DD
Supply
Supply
DQ Ground: Provide isolated ground to DQs for improved noise immunity.
Power Supply: Voltage dependant on option.
A2, H2, R2
V
SS
Supply
Ground.
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