參數(shù)資料
型號： MT46V64M4
廠商： Micron Technology, Inc.
英文描述： 16 Meg x 4 x 4 banks DDR SDRAM(16M x 4 x 4組,雙數(shù)據速率同步動態(tài)RAM)
中文描述： 16梅格× 4 × 4銀行DDR SDRAM內存（1,600 × 4 × 4組，雙數(shù)據速率同步動態(tài)RAM）的
文件頁數(shù)： 3/69頁
文件大?。?/td> 2410K
代理商： MT46V64M4
3
256Mb: x4, x8, x16 DDR SDRAM
256Mx4x8x16DDR_B.p65
–
Rev. B; Pub. 7/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
256Mb: x4, x8, x16
DDR SDRAM
ADVANCE
TABLE OF CONTENTS
Functional Block Diagram – 64 Meg x 4 ...............
Functional Block Diagram – 32 Meg x 8 ...............
Functional Block Diagram – 16 Meg x 16 .............
Pin Descriptions......................................................
4
5
6
7
Functional Description
.........................................
Initialization ......................................................
Register Definition .............................................
Mode Register ...............................................
Burst Length ............................................
Burst Type................................................
Read Latency ...........................................
Operating Mode ......................................
Extended Mode Register ...............................
DLL Enable/Disable .................................
9
9
9
9
9
10
11
11
12
12
Commands
............................................................
Truth Table 1 (Commands)
.......................................
Truth Table 1A (DM Operation)
.................................
Deselect ..............................................................
No Operation (NOP) ..........................................
Load Mode Register ...........................................
Active ................................................................
Read
................................................................
Write ................................................................
Precharge ...........................................................
Auto Precharge ..................................................
Burst Terminate .................................................
Auto Refresh ......................................................
Self Refresh.........................................................
13
13
13
14
14
14
14
14
14
14
14
14
15
15
Operation
..............................................................
Bank/Row Activation .......................................
Reads ................................................................
Read Burst ....................................................
Consecutive Read Bursts ..............................
Nonconsecutive Read Bursts .......................
Random Read Accesses ................................
Terminating a Read Burst ............................
Read to Write ...............................................
Read to Precharge .........................................
Writes ................................................................
Write Burst....................................................
Consecutive Write to Write .........................
Nonconsecutive Write to Write ..................
16
16
17
18
19
20
21
23
24
25
26
27
28
29
Random Writes ............................................
Write to Read – Uninterrupting ..................
Write to Read – Interrupting.......................
Write to Read – Odd, Interrupting .............
Write to Precharge – Uninterrupting ..........
Write to Precharge – Interrupting ...............
Write to Precharge – Odd, Interrupting......
Precharge ...........................................................
Power-Down .....................................................
Truth Table 2 (CKE)
.................................................
Truth Table 3 (Current State, Same Bank)
.....................
Truth Table 4 (Current State, Different Bank)
.................
30
31
32
33
34
35
36
37
37
38
39
41
Operating Conditions
Absolute Maximum Ratings ....................................
DC Electrical and Operating Conditions.....................
AC Input Operating Conditions .............................
Capacitance – x4, x8 ..............................................
I
DD
Specifications and Conditions – x4, x8...........
Capacitance – x16 ..................................................
I
DD
Specifications and Conditions - x16 ...............
AC Electrical Characteristics (Timing Table) ..........
Data Valid Window Derating ...............................
43
43
43
44
44
45
45
46
49
Voltage and Timing Waveforms
Nominal Output Drive Curves .........................
Reduced Output Drive Curves (x16 only)........
Output Timing –
t
DQSQ and
t
QH – x4, x8 .....
Output Timing –
t
DQSQ and
t
QH – x16 .........
Output Timing –
t
AC
and
t
DQSCK .................
Input Timing.....................................................
Input Voltage....................................................
Initialize and Load Mode Registers ..................
Power-Down Mode ..........................................
Auto Refresh Mode ...........................................
Self Refresh Mode .............................................
Reads
Bank Read – Without Auto Precharge........
Bank Read – With Auto Precharge..............
Writes
Bank Write – Without Auto Precharge.......
Bank Write – With Auto Precharge.............
Write – DM Operation ................................
66-pin TSOP dimensions........................................
54
55
56
57
58
58
59
60
61
62
63
64
65
66
67
68
69
相關PDF資料
PDF描述
MT46V64M8 16 Meg x 8 x 4 banks DDR SDRAM(16M x 8 x 4組,雙數(shù)據速率同步動態(tài)RAM)
MT48LC16M8A1TG SYNCHRONOUS DRAM
MT48LC32M4A1 ECONOLINE: RSZ/P - 1kVDC
MT48LC32M4A2 SYNCHRONOUS DRAM
MT48LC32M4A1TG SYNCHRONOUS DRAM
相關代理商/技術參數(shù)
參數(shù)描述
MT46V64M4_1 制造商:MICRON 制造商全稱:Micron Technology 功能描述:Double Data Rate (DDR) SDRAM
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*