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參數(shù)資料
| 型號(hào)： | MT3S41FS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | 2-1E1A, FSM, 3 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 112K |
| 代理商： | MT3S41FS |
MT3S41FS
2004-12-27
2
Microwave Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition frequency
fT
VCE = 3 V, IC = 20 mA, f = 2 GHz
11
15
-
GHz
|S21e|
2 (1)
VCE = 3 V, IC = 20 mA, f = 1 GHz
13.5
15.5
-
dB
Insertion gain
|S21e|
2 (2)
VCE = 3 V, IC = 20 mA, f = 2 GHz
8
10
-
dB
NF (1)
VCE = 3 V, IC = 5 mA, f = 1 GHz
-
0.8
-
dB
Noise figure
NF (2)
VCE = 3 V, IC = 5 mA, f = 2 GHz
-
1.2
1.8
dB
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 8 V, IE = 0
-
1
A
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
-
1
A
DC current gain
hFE
VCE = 3 V, IC = 20 mA
70
-
140
-
Output capacitance
Cob
VCB = 1 V, IE = 0, f = 1 MHz
-
0.72
1.10
pF
Reverse transistor capacitance
Cre
VCB = 1 V, IE = 0, f = 1 MHz (Note
1)
-
0.46
0.85
pF
Note 1:
Cre is measured using a three-terminal method with a capacitance bridge.
Note 2:
This product is a lead-free article.
Caution:
This device is sensitive to electrostatic discharge. Be sure to provide all tools and equipment with
adequate grounding.
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