參數(shù)資料
型號: MT4S03AU
元件分類: 小信號晶體管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: 2-2K1A, USQ, 4 PIN
文件頁數(shù): 1/3頁
文件大?。?/td> 110K
代理商: MT4S03AU
MT4S03AU
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT4S03AU
VHF~UHF Band Low Noise Amplifier Applications
Low noise figure: NF = 1.4dB (f = 2 GHz)
High gain: gain = 9dB (f = 2 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
10
V
Collector-emitter voltage
VCEO
5
V
Emitter-base voltage
VEBO
2
V
Base current
IC
40
mA
Collector current
IB
10
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Marking
Microwave Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
fT (1)
VCE = 1 V, IC = 5 mA
2
4.5
Transition frequency
fT (2)
VCE = 3 V, IC = 10 mA
7
10
GHz
S21e
2 (1)
VCE = 1 V, IC = 5 mA, f = 2 GHz
3.5
5.5
Insertion gain
S21e
2 (2)
VCE = 3 V, IC = 20 mA, f = 2 GHz
7
9
dB
NF (1)
VCE = 1 V, IC = 5 mA, f = 2 GHz
1.7
3
Noise figure
NF (2)
VCE = 3 V, IC = 7 mA, f = 2 GHz
1.4
2.2
dB
Unit: mm
JEDEC
JEITA
TOSHIBA
2-2K1A
Weight: 0.006 g (typ.)
Preliminary
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