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參數(shù)資料
| 型號(hào)： | MT3S36T |
| 廠商： | Toshiba Corporation |
| 英文描述： | TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE |
| 中文描述： | 晶體管硅npn型平面型外延 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 118K |
| 代理商： | MT3S36T |
MT3S36T
2 2002-08-19
Microwave Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition Frequency
fT
V
CE
=3V, I
C
=15mA, f=2GHz
15
19
-
GHz
|S21e|
2
(1)
V
CE
=3V, I
C
=15mA, f=1GHz
15
17.5
-
dB
Insertion Gain
|S21e|
2
(2)
V
CE
=3V, I
C
=15mA, f=2GHz
10
12.5
-
dB
NF(1)
V
CE
=3V, I
C
=3mA, f=1GHz
-
1.1
-
dB
Noise Figure
NF(2)
V
CE
=3V, I
C
=3mA, f=2GHz
-
1.3
1.8
dB
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector Cut-off Current
I
CBO
V
CB
=8V, I
E
=0
-
-
1
μA
Emitter Cut-off Current
I
EBO
V
EB
=1V, I
C
=0
-
-
1
μA
DC Current Gain
hFE
V
CE
=3V, I
C
=10mA
70
-
140
-
Output Capacitance
C
ob
V
CB
=1V, I
E
=0, f=1MHz
-
0.55
0.85
pF
Reverse Transistor Capacitance
C
re
V
CB
=1V, I
E
=0, f=1MHz (Note 1)
-
0.26
0.5
pF
Note 1:
Cre is measured by 3 terminal method with capacitance bridge.
Caution:
This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.
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