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參數(shù)資料
| 型號(hào)： | MT3S36T |
| 廠商： | Toshiba Corporation |
| 英文描述： | TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE |
| 中文描述： | 晶體管硅npn型平面型外延 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 118K |
| 代理商： | MT3S36T |
MT3S36T
1 2002-08-19
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE
MT3S36T
VCO OSCILLETOR STAGE
UHF LOW NOISE AMPLIFIER APPLICATION
FEATURES
Low Noise Figure :NF=1.3dB (@f=2GHz)
High Gain:|S21e|
2
=12.5dB (@f=2GHz)
Marking
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-Base voltage
V
CBO
8
V
Collector-Emitter voltage
V
CEO
4.5
V
Emitter-Base voltage
V
EBO
1.5
V
Collector-Current
I
C
36
mA
Base-Current
I
B
18
mA
Collector Power dissipation
P
C
100
mW
Junction temperature
T
j
150
°C
Storage temperature Range
T
stg
55~150
°C
Unit: mm
TESM
JEDEC
―
JEITA
―
TOSHIBA
2-1B1A
Weight:0.0022g (typ.)
3
1
2
Q 3
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