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參數(shù)資料
| 型號(hào)： | MT3S15TU |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | UFM, 2-2U1B, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 170K |
| 代理商： | MT3S15TU |
MT3S15TU
2009-03-31
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S15TU
VHF-UHF Low-Noise, Low-Distortion Amplifier Application
Features
Low-Noise Figure: NF=1.6 dB (typ.) (@ f=1 GHz)
High Gain: |S21e|
2=13.5 dB (typ.) (@ f=1 GHz)
Marking
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-basevoltage
VCBO
12
V
Collector-emitter voltage
VCEO
6
V
Emitter-base voltage
VEBO
2
V
Collector-current
IC
80
mA
Base-current
IB
10
mA
Collector power dissipation
PC(Note 1)
900
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: The device is mounted on a ceramic board (25.4 mm x 25.4 mm x 0.8 mm (t))
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
UFM
JEDEC
JEITA
TOSHIBA
2-2U1B
Weight: 6.6 mg (typ.)
-0
.0
5
1.7±0.1
2.1±0.1
0.
65±
0.
05
1
2
2.
0±
0.
1
3
0.7±0.
05
+0
.1
0.
3
0.
16
6±
0.
05
1. BASE
2. EMITTER
3. COLLECTOR
T 3
1
2
3
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