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參數(shù)資料
| 型號： | MT3S18FS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | FSM, 2-1E1A, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 128K |
| 代理商： | MT3S18FS |
MT3S18FS
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S18FS
VHF~UHF Band Low-Noise Amplifier Applications
VHF~UHF Band Oscillator/Buffer Applications
Superior performance in oscillator and buffer applications.
Superior noise characteristics.
: NF = 1.4 dB, |S21e|
2 = 12 dB (f =1GHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector- base voltage
VCBO
20
V
Collector- emitter voltage
VCEO
8
V
Emitter- base voltage
VEBO
1.5
V
Collector current
IC
20
mA
Base current
IB
10
mW
Collector power dissipation
PC(Note)
85
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: 10mm
2 ×0.8 mm(t), mounted on a glass-epoxy printed circuit board.
Marking
JEDEC
―
JEITA
―
TOSHIBA
2-1E1A
Weight: 0.0006 g (typ.)
0 U
1
2
3
0.
2±
0.
05
0.1±0.05
3
0.8±0.05
1.0±0.05
0.1
5±0.0
5
0.
35
±0
.05
0.
6±0.0
5
1
2
0.1±0.05
0.4
8
+0
.0
2
-0.
04
1.Base
2.Emitter
3.Collector
Unit: mm
fSM
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