參數資料
型號: MT3S12FS
元件分類: 小信號晶體管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: FSM, 2-1E1A, 3 PIN
文件頁數: 2/3頁
文件大?。?/td> 133K
代理商: MT3S12FS
MT3S12FS
2007-11-01
2
Microwave Characteristics (Ta = 25°C)
Characteristic
Symbol
Condition
Min
Typ.
Max
Unit
Transition frequency
fT
VCE = 1 V, IC = 5 mA
5
7
GHz
S21e
2 (1)
VCE = 1 V, IC = 5 mA, f = 2 GHz
4.5
Insertion gain
S21e
2 (2)
VCE = 3 V, IC = 20 mA, f = 2 GHz
4.5
7
dB
Noise figure
NF
VCE = 1 V, IC = 5 mA, f = 2 GHz
1.7
2.5
dB
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Condition
Min
Typ.
Max
Unit
Collector cutoff current
ICBO
VCB = 5 V, IE = 0
0.1
μA
Emitter cutoff current
IEBO
VEB = 1 V, IC = 0
1
μA
DC current gain
hFE
VCE = 1 V, IC = 5 mA
100
160
Reverse transfer capacitance
Cre
VCB = 1 V, IE = 0, f = 1 MHz(Note)
0.7
0.95
pF
Note: Cre is measured with a three-terminal method using a capacitance bridge.
Caution
This device is sensitive to electrostatic discharge. Ensure that tools and equipment are sufficiently grounded before
handling. When handling individual devices (which are not yet mounted on a circuit board), ensure that the
environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers
and other objects that come into direct contact with devices should be made of antistatic materials.
相關PDF資料
PDF描述
MT3S12FS UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
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相關代理商/技術參數
參數描述
MT3S12T 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:VHF~UHF Band Low-Noise Amplifier Applications
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MT3S14T 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:VHF~UHF Band Low-Noise Amplifier Applications
MT3S15TU 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:VHF-UHF Low-Noise, Low-Distortion Amplifier Application
MT3S16T 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:VHF~UHF Band Oscillator and Amplifier Applications