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參數(shù)資料
| 型號： | MT3S08T |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | 2-1B1A, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 124K |
| 代理商： | MT3S08T |
MT3S08T
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S08T
VHF~UHF Band Low Noise Amplifier Applications
Suitable for use in an OSC
Low noise figure
NF = 1.4dB
|S21e|2 = 10.5dB (@1 V/5 mA/1 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
8
V
Emitter-base voltage
VEBO
1.5
V
Collector current
IC
40
mA
Base current
IB
10
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-1B1A
Weight: 2.2 mg (typ.)
T H
2
1
3
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