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參數(shù)資料
| 型號(hào)： | MT3S107FS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | K BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, 2-1E1A, FSM, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 66K |
| 代理商： | MT3S107FS |
MT3S107FS
1
2005-06-13
TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE
MT3S107FS
VCO BUFFER STAGE
VHF-SHF Low Noise Amplifier Application
FEATURES
Low Noise Figure :NF=0.85dB (@f=2GHz)
High Gain:|S21e|2= 13dB (@f=2GHz)
Leed (Pb)-free.
Marking
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-Base voltage
VCBO
10
V
Collector-Emitter voltage
VCEO
4.5
V
Emitter-Base voltage
VEBO
1.5
V
Collector-Current
IC
20
mA
Base-Current
IB
10
mA
Collector Power dissipation
PC(Note)
100
mW
Junction temperature
Tj
150
°C
Storage temperature Range
Tstg
55~150
°C
Note: Device mounted on a glass-epoxy PCB(1.0 cm
2 x 1.0 mm (t))
Unit:mm
0
.15
±
0
.05
0.
3
5
±
0.
0
5
0.
6
±
0.
0
5
0.
2±0
.0
5
1.0±0.05
0.8±0.05
0.1±0.05
1
2
3
0.
1±
0.
05
0
.4
8
+
0
.02
-0
.04
1.BASE
2.EMITTER
3.COLLECTOR
fSM
JEDEC
-
JEITA
-
TOSHIBA
2-1E1A
Weight: 0.0006 g
2
1
3
4 2
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