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參數(shù)資料
| 型號(hào)： | MT3S03AFS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 40 mA, 5 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | 2-1E1A, FSM, 3 PIN |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 134K |
| 代理商： | MT3S03AFS |
MT3S03AFS
2007-11-01
2
Microwave Characteristics (Ta = 25°C)
Characteristic
Symbol
Condition
Min
Typ.
Max
Unit
Transition frequency
fT
VCE = 3 V, IC = 10 mA
7
10
GHz
S21e
2 (1)
VCE = 1 V, IC = 5 mA, f = 2 GHz
5.5
Insertion gain
S21e
2 (2)
VCE = 3 V, IC = 20 mA, f = 2 GHz
6
8.5
dB
Noise figure
NF (1)
VCE = 1 V, IC = 5 mA, f = 2 GHz
1.7
3
dB
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Condition
Min
Typ.
Max
Unit
Collector cutoff current
ICBO
VCB = 5 V, IE = 0
0.1
μA
Emitter cutoff current
IEBO
VEB = 3.5 V, IC = 0
10
μA
DC current gain
hFE
VCE = 1 V, IC = 5 mA
80
160
Reverse transfer capacitance
Cre
VCB = 1 V, IE = 0, f = 1 MHz(Note)
0.75
1
pF
Note: Cre is measured with a three-terminal method using a capacitance bridge.
Caution
This device is sensitive to electrostatic discharge. Ensure that tools and equipment are sufficiently grounded before
handling. When handling individual devices (which are not yet mounted on a circuit board), ensure that the
environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers
and other objects that come into direct contact with devices should be made of antistatic materials.
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