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參數(shù)資料
| 型號(hào)： | MT3S04A |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | S-MINI, 2-3F1A, SC-59, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 82K |
| 代理商： | MT3S04A |
MT3S04A
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S04A
VHF~UHF Band Low Noise Amplifier Applications
Low noise figure: NF = 1.2dB (f = 1 GHz)
High gain: Gain = 12.5dB (f = 1 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
10
V
Collector-emitter voltage
VCEO
5
V
Emitter-base voltage
VEBO
2
V
Base current
IC
40
mA
Collector current
IB
10
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Marking
Microwave Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
fT (1)
VCE = 1 V, IC = 5 mA
2
5
Transition frequency
fT (2)
VCE = 3 V, IC = 7 mA
5
7
GHz
S21e
2 (1)
VCE = 1 V, IC = 5 mA, f = 1 GHz
9.5
Insertion gain
S21e
2 (2)
VCE = 3 V, IC = 20 mA, f = 1 GHz
7.5
12.5
dB
NF (1)
VCE = 1 V, IC = 5 mA, f = 1 GHz
1.3
2.2
Noise figure
NF (2)
VCE = 3 V, IC = 7 mA, f = 1 GHz
1.2
2
dB
Unit: mm
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012g (typ.)
S-Mini
1.Base
2.Emitter
3.Collector
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MT3S04S | RF SMALL SIGNAL TRANSISTOR |
| MT3S04T | RF SMALL SIGNAL TRANSISTOR |
| MT3S05FS | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MT3S05T | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MT3S05T | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT3S04AFS | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:VHF~UHF Band Low-Noise Amplifier Applications |
| MT3S04AS | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SILICON NPN EPITAXIAL PLANAR TYPE |
| MT3S04AT | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
| MT3S04AT_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:VHF~UHF Band Low Noise Amplifier Applications |
| MT3S04AU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TRANSISTOR SILICON NPN EPITAXIAL TYPE |
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