參數(shù)資料
型號(hào)： MT28C128564W18EFW-F706-P706KBTWT
元件分類： 存儲(chǔ)器
英文描述： SPECIALTY MEMORY CIRCUIT, PBGA77
封裝： FBGA-77
文件頁(yè)數(shù)： 5/15頁(yè)
文件大小： 158K
代理商： MT28C128564W18EFW-F706-P706KBTWT
128Mb MULTIBANK BURST FLASH
32Mb/64Mb BURST CellularRAM COMBO
PRELIMINARY
09005aef80b10a55
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28C128564W18E_B.fm - Rev. B, Pub 11/03 EN
13
2003 Micron Technology. Inc.
NOTE:
1. C_CRE ball HIGH, CR4 bit in the CellularRAM refresh configuration register set to zero. Measured at 25°C, this
standby current is the sum of the Flash standby current and the CellularRAM deep-power down mode current.
2. ICCES and ICCWS values are valid when the device is deselected. Any READ operation performed while in suspend
mode will have an additional current draw of suspend current.
3. Automatic power save (APS) mode reduces ICC to approximately ICCS levels.
4. Currents are measured using CellularRAM full array self-refresh. Currents may be further reduced by using the TCR
or PAR features.
Table 7:
DC Characteristics
It is important to note that the specifications contained in this document supersede the specifications listed in the
referenced individual Flash and CellularRAM data sheets. All currents are in RMS unless otherwise noted.
PARAMETER
SYMBOL
W18/W30
UNITS
NOTES
TYP
MAX
VCC Standby Current
with 32Mb CellularRAM device
with 64Mb CellularRAM device
ICCS
140
150
A
VCC Standby with CellularRAM device in deep power-
down (DPD) mode
with 32Mb CellularRAM device
with 64Mb CellularRAM device
ISBZZ
60
A
1, 4
VCC Program Suspend Current
with 32Mb CellularRAM device
with 64Mb CellularRAM device
ICCWS
140
150
A
2, 4
VCC Erase Suspend Current
with 32Mb CellularRAM device
with 64Mb CellularRAM device
ICCES
140
150
A
2, 4
VCC Automatic Power Save Current
with 32Mb CellularRAM device
with 64Mb CellularRAM device
ICCAPS
140
150
A
3, 4
Table 8:
CFI
It is important to note that the specifications contained in this document supersede the specifications listed in the
referenced individual Flash and CellularRAM data sheets.
OFFSET
DATA
DESCRIPTION
78
32Mb: 0020
CellularRAM Density
64Mb: 0040
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