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參數(shù)資料
| 型號(hào)： | MT28C128532W18EFW-F605-P706BTWT |
| 元件分類(lèi)： | 存儲(chǔ)器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBGA77 |
| 封裝： | FBGA-77 |
| 文件頁(yè)數(shù)： | 3/15頁(yè) |
| 文件大?。?/td> | 158K |
| 代理商： | MT28C128532W18EFW-F605-P706BTWT |
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NOTE:
1. WAIT status is only valid for burst mode operation. WAIT should be ignored for all other operating modes.
Table 3:
Truth Table
MODES
FLASH SIGNALS
SHARED SIGNALS
CellularRAM SIGNALS
MEMORY OUTPUT
F_CE1# F_CE2# F_OE1# F_OE2# F_WE#
F_RST#
ADV#
WAIT#
C_CE# C_CRE C_OE# C_UB/LB# C_WE#
MEMORY
BUS
CONTROL
DQ0–
DQ15
FL
A
S
H
F_
C
E
1
#
Read
L
H
L
X
H
L
Active1
CellularRAM memory must be in High-Z
Flash
DOUT
Write
L
H
X
L
H
X
Asserted
Flash
DIN
Standby
H
X
XXH
X
High-Z
CellularRAMmemory any mode allowable
Other
High-Z
Output
Disable
LX
H
X
H
X
Active1
Other
High-Z
Reset
X
L
X
High-Z
None
High-Z
FL
A
S
H
F_
C
E
2
#
Read
H
L
X
L
H
L
Active1
CellularRAM memory must be in High-Z
Flash
DOUT
Write
H
L
X
H
L
H
X
Asserted
Flash
DIN
Standby
X
H
X
XXH
X
High-Z
CellularRAM memory any mode allowable
Other
High-Z
Output
Disable
XL
X
H
X
Active1
Other
High-Z
Reset
X
L
X
High-Z
None
High-Z
CE
LLU
LARR
AM
M
E
M
O
RY Read
Flash must be in High-Z
L
Active1
LL
L
H
Cellular
RAM
DOUT
Write
L
Active1
LL
H
L
Cellular
RAM
DIN
Standby
Flash any mode allowable
X
H
L
XXX
Other
High-Z
Output
Disable
XX
L
H
X
H
Other
High-Z
Deep
Sleep
Mode
X
H
XXX
Other
High-Z
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參數(shù)描述 |
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| MT28C3212P2FL | 制造商:MICRON 制造商全稱(chēng):Micron Technology 功能描述:FLASH AND SRAM COMBO MEMORY |
| MT28C3212P2NFL | 制造商:MICRON 制造商全稱(chēng):Micron Technology 功能描述:FLASH AND SRAM COMBO MEMORY |
| MT28C3214P2FL | 制造商:MICRON 制造商全稱(chēng):Micron Technology 功能描述:FLASH AND SRAM COMBO MEMORY |
| MT28C3214P2FL-10 BET | 制造商:Micron Technology Inc 功能描述: |
| MT28C3214P2FL-10 BET TR | 制造商:Micron Technology Inc 功能描述: |
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