參數(shù)資料
型號(hào)： MSS39,045-P55
元件分類： 射頻混頻器
英文描述： SILICON, KU BAND, MIXER DIODE
封裝： HERMETIC SEALED, CERAMIC, CASE P55, 2 PIN
文件頁數(shù)： 1/4頁
文件大小： 161K
代理商： MSS39,045-P55
Revision Date: 05/20/05
The Aeroex / Metelics MSS39,000 series of Schottky diodes is
fabricated on P-Type epitaxial substrates for superior 1/f noise
performance in microwave biased-detector applications up to 40
GHz.
Very low 1/f Noise
Detector applications to 40 GHz
Chip, beam lead or packaged devices
Description
Features
MSS39,000 Series
P-Type Silicon Schottky Diodes
Model
V
BR
MIN
V
F
TYP
V
C
J
MAX
pF
T
SS
TYP
dBm
γ
TYP
mV / mW
Frequency
MAX
GHz
Outline
MSS39,045-C15
5.0
0.40
0.10
-58
5,000
18
C15
MSS39,048-C15
5.0
0.39
0.15
-58
5,000
12
C15
Test
Conditions
I
R = 10
R
μA
I
F = 1 mA
V
R = 0 V
R
F = 1MHz
DC Bias = 10 μA
F = 10 GHz
R
L = 100 KΩ
Video BW = 2 MHz
Chip
Electrical Specifications, T
A = 25 C
Parameters
Rating
Reverse Voltage
Rated V
BR
Forward Current
50 mA
Operation Temperature
-65 C to +150 C
Storage Temperature
-65 C to +150 C
Power Dissipation
100 mW, derated linearly to zero at T
A
T = +150 C
Soldering Temperature (Packaged)
+ 230 C for 5 sec.
Beam Lead Pull Strength, Min
4 grams
Absolute Maximum Ratings
相關(guān)PDF資料
PDF描述
MSS50,146-H20 SILICON, HIGH BARRIER SCHOTTKY, mm WAVE BAND, MIXER DIODE
MSV-38087-C12 5.8 pF, 45 V, SILICON, VARIABLE CAPACITANCE DIODE
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