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參數(shù)資料
| 型號： | MSS30,CR53-E45 |
| 元件分類： | 射頻混頻器 |
| 英文描述： | SILICON, MIXER DIODE |
| 封裝： | CERAMIC, CASE E45, 4 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 91K |
| 代理商： | MSS30,CR53-E45 |
Revision Date: 05/23/05
The Aeroex / Metelics MSS CR Series of Schottky crossover
quad diodes are fabricated on N-Type epitaxial substrates using
proprietary processes that yield the highest FCOs in the industry.
Barrier heights for LO power levels from 3 dBm to +17 dBm are
available..
Five different barrier heights
Beam lead or packaged devices
Hi-Rel screening per MIL-PRF-19500
and MIL-PRF-38534 available
Description
Features
MSS CR Series
Silicon Schottky Crossover Quad Diodes
r
Absolute Maximum Ratings
Beam Lead
Electrical Specifications, T
A = 25 C
Model
V
F
TYP
mV
C
J
TYP
pF
C
J
MAX
pF
R
D
TYP
R
D
MAX
Outline
MSS30, CR46-B49
280
0.09
0.125
15
22
B49
MSS30, CR53-B49
260
0.15
0.250
10
15
B49
MSS40, CR46-B49
470
0.09
0.125
15
22
B49
MSS40, CR53-B49
430
0.15
0.250
10
15
B49
Test
Conditions
I
F = 1mA
V
R = 0 V
R
F = 1MHz
I
F = 5 mA
Parameters
Rating
Reverse Voltage
Rated V
BR
Forward Current
50 mA
Operation Temperature
-65 C to +150 C
Storage Temperature
-65 C to +150 C
Power Dissipation
100 mW per junction at T
A
T = 25 C, derate
A
linearly to zero at T
A
T = +150 C
Soldering Temperature (Packaged)
+ 260 C for 5 sec.
Beam Lead Pull Strength
4 grams minimum
相關(guān)PDF資料 |
PDF描述 |
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| MSS39,045-P55 | SILICON, KU BAND, MIXER DIODE |
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| MSV-38087-C12 | 5.8 pF, 45 V, SILICON, VARIABLE CAPACITANCE DIODE |
| MSV-34064-T86 | 0.8 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE |
| MSV-34087-T86 | 6 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE |
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