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參數(shù)資料
| 型號： | MSM52V1017L |
| 廠商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | 65,536-Word ×16-Bit CMOS STATIC RAM(64k字×16位靜態(tài)RAM) |
| 中文描述： | 65,536字× 16位的CMOS靜態(tài)RAM（64K的字× 16位靜態(tài)RAM）的 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 124K |
| 代理商： | MSM52V1017L |
Semiconductor
MSM52V1017L
6/9
Read Cycle
OE
to Output in Low-Z
OE
to Output in High-Z
Output Hold Time from Address Change
OE
Access Time
Parameter
Symbol
MSM52V1017L-85
Min.
85
—
—
—
—
MSM52V1017L-10MSM52V1017L-12
Min.
Max.
100
—
100
100
100
—
100
—
Max.
—
85
85
85
85
Unit
Min.
120
—
—
—
—
Max.
—
120
120
120
120
Read Cycle Time
Address Access Time
LB
,
UB
Access Time
LB
,
UB
to Output in Low-Z
LB
,
UB
to Output in High-Z
ns
ns
ns
45
—
—
—
50
—
—
—
60
—
—
—
ns
10
10
10
10
10
10
10
10
10
ns
5
—
30
30
30
5
5
—
35
35
35
—
35
35
35
ns
10
—
10
10
—
—
ns
—
—
—
ns
30
35
35
ns
t
RC
t
AA
t
LB
t
UB
t
CO
t
OE
t
LBLZ
t
UBLZ
t
CLZ
t
OLZ
t
LBHZ
t
UBHZ
t
CHZ
t
OH
(V
CC
= 2.7 V to 3.6 V, Ta = 0°C to 70°C)
t
OHZ
—
—
—
—
—
—
—
—
—
—
—
—
—
—
CE to Output in Low-Z
CE to Output in High-Z
CE Access Time
ns
ns
ns
ADDRESS
LB
,
UB
CE
OE
D
OUT
t
RC
t
AA
t
LBHZ
, t
UBHZ
t
LB
, t
UB
t
LBLZ
, t
UBLZ
t
CO
t
CLZ
t
CHZ
t
OE
t
OHZ
t
OLZ
Valid Data-out
t
OH
Notes:
1. A read cycle occurs during the overlap of
LB
= "L" (or
UB
= "L"), CE = "H",
OE
= "L" and
WE
= "H".
2. t
LBHZ
, t
UBHZ
, t
CHZ
and t
OHZ
are specified by the time when DATA is floating, not
defined by the output level.
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