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參數(shù)資料
| 型號： | MSD602RT1 |
| 廠商： | Motorola, Inc. |
| 英文描述： | NPN General Purpose Amplifier Transistor Surface Mount |
| 中文描述： | npn型晶體管放大器通用表面貼裝 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 119K |
| 代理商： | MSD602RT1 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MAXIMUM RATINGS
(TA = 25
°
C)
Rating
Symbol
Value
Unit
Collector–Base Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
IC(P)
60
Vdc
Collector–Emitter Voltage
50
Vdc
Emitter–Base Voltage
7.0
Vdc
Collector Current — Continuous
500
mAdc
Collector Current — Peak
1.0
Adc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
PD
TJ
Tstg
200
mW
Junction Temperature
150
°
C
Storage Temperature
–55 ~ +150
°
C
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C)
Characteristic
Symbol
Min
Max
Unit
Collector–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
Collector–Base Breakdown Voltage (IC = 10
μ
Adc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 10
μ
Adc, IC = 0)
Collector–Base Cutoff Current (VCB = 20 Vdc, IE = 0)
DC Current Gain(1)
(VCE = 10 Vdc, IC = 150 mAdc)
(VCE = 10 Vdc, IC = 500 mAdc)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
50
—
Vdc
60
—
Vdc
7.0
—
Vdc
—
0.1
μ
Adc
hFE1
hFE2
120
40
240
—
—
Collector–Emitter Saturation Voltage (IC = 300 mAdc, IB = 30 mAdc)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width
≤
300
μ
s, D.C.
≤
2%.
VCE(sat)
Cob
—
0.6
Vdc
—
15
pF
DEVICE MARKING
Marking Symbol
WR
X
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MSD602–RT1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
CASE 318D–03, STYLE 1
SC–59
2
1
3
COLLECTOR
3
2
BASE
1
EMITTER
REV 1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MSD602-RT1 | 功能描述:兩極晶體管 - BJT 500mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MSD602-RT1G | 功能描述:兩極晶體管 - BJT SS GP XSTR NPN 25V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MSD6100 | 功能描述:二極管 - 通用，功率，開關(guān) 100V 200mA RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| MSD6100G | 功能描述:二極管 - 通用，功率，開關(guān) 100V 200mA RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| MSD6100RLRA | 功能描述:二極管 - 通用，功率，開關(guān) 100V 200mA RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
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