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參數(shù)資料
| 型號： | MSD1819A-RT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 419-04, SC-70, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 153K |
| 代理商： | MSD1819A-RT3 |
MSD1819ART1
http://onsemi.com
1374
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0)
V(BR)CEO
50
Vdc
Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0)
V(BR)CBO
60
Vdc
Emitter-Base Breakdown Voltage (IE = 10 Adc, IE = 0)
V(BR)EBO
7.0
Vdc
Collector-Base Cutoff Current (VCB = 20 Vdc, IE = 0)
ICBO
0.1
A
Collector-Emitter Cutoff Current (VCE = 10 Vdc, IB = 0)
ICEO
0.1
A
DC Current Gain (Note 2)
(VCE = 10 Vdc, IC = 2.0 mAdc)
(VCE = 2.0 Vdc, IC = 100 mAdc)
hFE1
hFE2
210
90
340
Collector-Emitter Saturation Voltage (Note 2)
(IC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
0.5
Vdc
2. Pulse Test: Pulse Width
≤ 300 s, D.C. ≤ 2%.
Figure 1. Derating Curve
250
200
150
100
50
0
-50
0
50
100
150
TA, AMBIENT TEMPERATURE (°C)
P D
,P
OWER
DI
SS
IP
AT
IO
N
(MILLIW
AT
TS)
Figure 2. IC VCE
VCE, COLLECTOR VOLTAGE (V)
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 4. Collector Saturation Region
IB, BASE CURRENT (mA)
I C
,COLLECT
OR
CURRENT
(mA)
60
0
50
40
30
20
10
0
24
6
8
TA = 25°C
160 A
140 A
120 A
100 A
80 A
60 A
40 A
IB = 20 A
DC
CURRENT
GAIN
1000
0.1
100
10
1
10
100
TA = 25°C
TA = -25°C
TA = 75°C
VCE = 10 V
V CE
,COLLECT
OREMITTER
VOL
TAGE
(V)
2
0.01
1.5
1
0.5
0
0.1
1
10
100
TA = 25°C
RθJA = 833°C/W
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MSD1819A-ST1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT |
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| MSD-1G-NP | 制造商:JVC Worldwide 功能描述:1G MICRO SDCARD |
| MSD200 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Glass Passivated Three Phase Rectifier Bridge |
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