參數(shù)資料
型號(hào): MSC81111
廠商: ADVANCED SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封裝: HLP-1, 2 PIN
文件頁數(shù): 1/1頁
文件大小: 13K
代理商: MSC81111
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
NONE
SYMBOL
TEST CONDITIONS
MINIMUM
TYPICAL MAXIMUM
UNITS
BVCER
IC = 5.0 mA
RBE = 10
45
V
BVCBO
IC = 1.0 mA
45
V
ICBO
VCB = 28 V
1.0
mA
BVEBO
IE = 1.0 mA
3.5
V
hFE
VCE = 5.0 V
IC = 200 mA
15
120
---
COB
VCB = 28 V
f = 1.0 MHz
6.5
pF
Pout
ηηηη
C
GP
VCC = 28 V
Pin = 500 mW
f = 1.0 GHz
5.0
50
10
6.6
52
11.2
W
%
dB
NPN SILICON RF POWER TRANSISTOR
MSC81111
DESCRIPTION:
The
MSC81111 is Designed for Class
"C" Amplifier Applicatioons from 0.4 to
1.2 GHz, Supplied in Common Base
Package.
MAXIMUM RATINGS
IC
600 mA
VCB
35 V
PDISS
21.8 W @ TC = 25
OC
TJ
-65
OC to +200 OC
TSTG
-65
OC to +200 OC
θθθθ
JC
8
OC/W
PACKAGE STYLE HLP-1
1 = Emitter
2 = Collector
3 = Base
Inches
Millimeters
Dim:
Min
Max
Min
Max
A
0.790
0.810
20.07
20.6
B
0.225
0.235
5.72
5.97
C
0.144
0.180
3.66
4.58
D
0.115
0.125
2.93
3.17
E
0.055
0.065
1.40
1.65
F
0.045
0.055
1.15
1.39
H
0.115
0.135
2.93
3.42
J
0.003
0.006
0.08
0.15
K
0.225
0.275
5.72
6.98
N
0.220
0.240
5.59
6.09
Q
0.125
0.135
3.18
3.42
U
0.552
0.572
14.03
14.5
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