參數(shù)資料
型號： MSC81350M
廠商： STMICROELECTRONICS
元件分類： 功率晶體管
英文描述： L BAND, Si, NPN, RF POWER TRANSISTOR
封裝： 0.400 X 0.400 INCH, HERMETIC SEALED, METAL CERAMIC, S042, AMPAC-2
文件頁數(shù)： 1/5頁
文件大?。?/td> 125K
代理商： MSC81350M
October 1992
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .400 2NLFL (S042)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
RUGGEDIZED VSWR 20:1
.
INTERNAL INPUT/OUTPUT MATCHING
.
LOW THERMAL RESISTANCE
.
METAL/CERAMIC HERMETIC PACKAGE
.
POUT
= 350 W MIN. WITH 7.0 dB GAIN
DESCRIPTION
The MSC81350M device is a high power pulsed
transistor specifically designed for IFF avionics
applications.
This device is capable of withstanding a minimum
20:1 load VSWR at any phase angle under full
rated conditions. Low RF thermal resistance and
semi automatic wire bonding techniques ensure
high reliability and product consistency.
The
MSC81350M
is
housed
in
the
unique
AMPAC
package
with
internal
input/output
matching structures.
PIN CONNECTION
BRANDING
81350M
ORDER CODE
MSC81350M
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation*
(TC
≤ 55C)
720
W
IC
Device Current*
19.8
A
VCC
Collector-Supply Voltage*
55
V
TJ
Junction Temperature (Pulsed RF Operation)
250
°C
TSTG
Storage Temperature
65 to +200
°C
RTH(j-c)
Junction-Case Thermal Resistance*
0.20
°C/W
*Applies only to rated RF amplifier operation
MSC81350M
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/5
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