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參數(shù)資料
| 型號： | MSC80196 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | 0.250 INCH, FM-2 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 14K |
| 代理商： | MSC80196 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25°C
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 1.0 mA
50
V
BVCEO
IC = 5.0 mA
20
V
BVEBO
IE = 1.0 mA
3.5
V
ICEO
VCE = 18 V
1.0
mA
hFE
VCE = 5.0 V
IC = 1.0 A
15
120
---
COB
VCB = 28 V
f = 1.0 MHz
5.0
pF
PG
VCE = 18 V
POUT = 1.0 W
f = 2.0 GHz
ICQ = 220 mA
7.0
dB
NPN SILICON RF POWER TRANSISTOR
MSC80196
DESCRIPTION:
The
ASI MSC80196 is Designed for
Class A Linear Applications up to 2.0 GHz.
FEATURES:
Class A Operation
P
G = 7.0 dB at 1.0 W/2.0 GHz
Omnigold Metalization System
MAXIMUM RATINGS
IC
500 mA
VCE
20 V
PDISS
10 W
TJ
-65 °C to +200 °C
TSTG
-65 °C to +200 °C
θθθθ
JC
17.0 °C/W
PACKAGE STYLE .250 2L FLG
COMMON EMITTER
MINIMUM
inches / mm
.740 / 18.80
.128 / 3.25
.245 / 6.22
.028 / 0.71
.110 / 2.79
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.032 / 0.81
.117 / 2.97
.132 / 3.35
inches / mm
.117 / 2.97
H
.560 / 14.22
.570 / 14.48
DIM
K
L
I
J
.790 / 20.07
.225 / 5.72
.003 / 0.08
.810 / 20.57
.235 / 5.97
.007 / 0.18
L
G
I
J
K
H
F
B
E
C
D
A
N
M
P
.060 x 45°
CHAMFER
P
N
M
.149 / 3.78
.058 / 1.47
.187 / 4.75
.068 / 1.73
.165 / 4.19
.185 / 4.70
.135 / 3.43
.119 / 3.02
.125 / 3.18
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參數(shù)描述 |
|---|---|
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| MSC80213 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN RF TRANSISTOR |
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