參數(shù)資料
型號: MSC74012
廠商: ADVANCED SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: NPN RF POWER TRANSISTOR
中文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封裝: FM-2
文件頁數(shù): 1/1頁
文件大小: 25K
代理商: MSC74012
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 2.0 mA
BV
EBO
I
C
= 2.0 mA
I
CBO
V
CB
= 28 V
h
FE
V
CE
= 5 V I
C
= 0.4 A
TEST CONDITIONS
MINIMUM
50
TYPICAL MAXIMUM
UNITS
V
3.0
V
0.5
mA
15
150
---
P
G
η
C
V
CC
= 28 V P
IN
= 0.85 W f = 1.5 - 1.7 GHz
Pulse Width = 100
μ
S Duty Cycle = 10%
8.5
50
54
dB
%
NPN RF POWER TRANSISTOR
MSC74012
DESCRIPTION:
The
ASI MSC74012
is a Common
Base Device Designed for CW
Applications in the 1.5 - 1.7 GHz
bands.
FEATURES INCLUDE:
Input/Output Matching
Gold Metallization
Hermetically Sealed Package
Emitter Ballasting
MAXIMUM RATINGS
I
C
0.6 A
V
CBO
50 V
P
DISS
20 W @ T
C
= 25
O
C
-55
O
C to+200
O
C
-55
O
C to+200
O
C
9.0
O
C/W
T
J
T
STG
θ
JC
PACKAGE STYLE 400 2L FLG (E)
1 = COLLECTOR 2 & 4 = BASE
3 = EMITTER
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