參數(shù)資料
型號： MSC1090M
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： 功率晶體管
英文描述： L BAND, Si, NPN, RF POWER TRANSISTOR
封裝： PLASTIC, 2LFL, M220, 4 PIN
文件頁數(shù)： 1/3頁
文件大小： 54K
代理商： MSC1090M
MSC1090M
Microsemi reserves the right to change, without notice, the specifications and information contained
herein. Visit our web site at www.microsemi.com or contact our factory direct.
DESCRIPTION:
The MSC1090M is a medium power Class C transistor designed
specifically for pulsed L-Band avionics applications. Low RF thermal
resistance and emitter ballasting ensure high reliability and product
consistency.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25
°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation
220
W
VCBO
Collector Base Voltage
65
V
Vces
Collector Emitter Voltage
65
V
Vebo
Emitter Base Voltage
3.5
V
TJ
Junction Temperature
200
C
IC
Device Current
5.52
A
TSTG
Storage Temperature
-65 to +150
C
Thermal Data
RTH(j-c)
Junction-Case Thermal Resistance
.8
°C/W
Revision A, January 2010
Features
1025-1150 MHz
GOLD METALLIZATION
INPUT MATCHED
INFINITE VSWR CAPABILITY @ RATED CONDITIONS
P
OUT = 90 W MINIMUM
G
P = 8.4 dB
RF AND MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
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