參數(shù)資料
型號: MSC1350M
元件分類: 功率晶體管
英文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封裝: 0.400 X 0.400 INCH, HERMETIC SEALED, M218, 2 PIN
文件頁數(shù): 1/3頁
文件大?。?/td> 101K
代理商: MSC1350M
MSCXXXX.PDF 08-19-02
MSC1350M
DESCRIPTION:
THE MSC1350M IS A SILICON NPN BIPOLAR DEVICE
SPECIFICALLY DESIGNED FOR IFF AVIONICS APPLICATIONS.
GOLD METALLIZATION AND EMITTER BALLASTING ASSURE
HIGH RELIABILITY UNDER CLASS A LINEAR AMPLIFIER
OPERATION. THE DEVICE IS CAPABLE OF WITHSTANDING
A 20:1 VSWR AT ALL PHASE ANGLES UNDER FULL LOAD
CONDITIONS.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
VCC
Collector-Supply Voltage
*
55
V
IC
Device Current
*
19.8
A
PDISS
Power Dissipation
*
720
W
TJ
Junction Temperature
200
°°C
TSTG
Storage Temperature
-65 to +200
°°C
Thermal Data
RTH(J-C)
Thermal Resistance Junction-case
*
0.2
°°C/W
Features
1090 MHz
COMMON BASE
GOLD METALLIZATION
CLASS C OPERATION
POUT = 350 W MIN. WITH 7.0 dB GAIN
WITHSTANDS 20:1 VSWR UNDER FULL LOAD
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
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