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參數(shù)資料
| 型號： | MS652S |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | PLASTIC, M123, 4 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 327K |
| 代理商： | MS652S |
MS652.PDF 12-04-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Page 1
MS652/MS652S
RF & MICROWAVE TRANSISTORS
ESCRIPTION
The MS652/MS652S is a 12.5 V Class C epitaxial silicon NPN planar
transistor designed primarily for UHF communications. It withstands severe
mismatch under normal operating conditions.
KEY FEATURES
§ 512 MHz
§ 12.5 Volts
§ Common Emitter
§
POUT = 5 W Min.
§
GP = 10.0 dB Gain
APPLICATIONS/BENEFIT
APPLICATIONS/BENEFITS
S
§ UHF Portable/Mobile
Applications
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25°°C)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
36
V
VCEO
Collector-Emitter Voltage
16
V
VEBO
Emitter-Base Voltage
4.0
V
IC
Device Current
2
A
PDISS
Power Dissipation
25
W
TJ
Junction Temperature
+200
°C
TSTG
Storage Temperature
-65 to +150
°C
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
7
°C/W
MS652
MS652S
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