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參數(shù)資料
| 型號(hào)： | MS652 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.280 INCH, PLASTIC, M122, STUD PACKAGE-4 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 110K |
| 代理商： | MS652 |
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
MS652/MS652S
5.0 Watts, 12.5 Volts, Class C
UHF Applications
GENERAL DESCRIPTION
The MS652/MS652S is a common emitter and 12.5V Class C epitaxial silicon
NPN planar transistor designed primarily for UHF communications. It withstands
severe mismatch under normal operating conditions.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
°C
25 Watts
BVCBO Collector to Base Voltage
36 Volts
BVCEO Collector to Emitter Voltage
16 Volts
BVEBO Emitter to Base Voltage
4.0 Volts
IC
Collector Current
2.0 Amps
Storage Temperature
-65 to +150
°C
Operating Junction Temperature
+200
°C
.280 4L STUD(M122), Epoxy sealed
MS652
.280 4LSL (M123), Epoxy sealed
MS652S
FUNCTIONAL CHARACTERISTICS @ 25
°°°°C
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
POUT
Power Out
5.0
-
W
PIN
Power Input
-
0.5
W
GP
Power Gain
F = 512 MHz
VCE = 12.5V
10.0
-
dB
η
Efficiency
POUT = 5W
60
-
%
ELECTRICAL CHARACTERISTICS @ 25
°°°°C
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
BVCES
Collector to Emitter Breakdown
IC = 25 mA, VBE = 0
36
-
V
BVCEO
Collector to Emitter Breakdown
IC = 50 mA, IB = 0
16
-
V
BVCBO
Collector to Base Breakdown
IC = 25 mA, IE = 0
36
-
V
BVEBO
Emitter to Base Breakdown
IE = 5 mA, IC = 0
4.0
-
V
ICES
Collector to Emitter Leakage
VCE = 15 V, VBE = 0
-
1.0
mA
hFE
DC – Current Gain
IC = 200 mA, VCE = 5 V
10
-
150
-
COB
Output Capacitance
F = 1MHz, VCB = 15V
-
15
pF
θjc1
Junction-Case Thermal Resistance
-
7
°C/W
NOTES: 1. At rated output power with MSC fixture.
Rev. A: May. 2010
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