參數(shù)資料
型號(hào): MS652
元件分類: 功率晶體管
英文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: PLASTIC, M122, 4 PIN
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 327K
代理商: MS652
MS652.PDF 12-04-03
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Page 2
MS652/MS652S
RF & MICROWAVE TRANSISTORS
STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C)
MS652S
Symbol
Test Conditions
Min.
Typ.
Max.
Units
BVCES
IC = 25 mA
VBE = 0
36
V
BVCEO
IC = 50 mA
IB = 0
16
V
BVCBO
IC = 25 mA
IE = 0
36
V
BVEBO
IE = 5 mA
IC = 0
4.0
V
ICES
VCE =15 V
VBE = 0
1.0
mA
hFE
VCE = 5 V
IC = 200 mA
10
150
DYNAMIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C)
MS652S
Symbol
Test Conditions
Min.
Typ.
Max.
Units
POUT
f = 512 MHz
VCC = 12.5 V
5
W
GP
f = 512 MHz
VCC = 12.5 V
10
dB
ηη
f = 512 MHz VCC = 12.5 V POUT = 5 W
60
%
COB
f = 1 MHz
VCB = 15 V
15
pF
LARGE SIGNAL IMPEDANCE DATA
Frequency
MHz
ZIN
ZCL
Units
400
1.2 + j0.6
6.5 + j6.5
440
1.2 + j0.9
7.2 + j6.0
470
1.2 + j1.2
7.7 + j5.3
512
1.2 + j1.5
8.3 + j4.5
Conditions
Vcc = 12.5V, Pout = 5W
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