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參數(shù)資料
| 型號(hào)： | MS2231 |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.400 X 0.500 INCH, HERMETIC SEALED, METAL CERAMIC, M216, 2 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 99K |
| 代理商： | MS2231 |
MS2231
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:
The MS2231 is a high-power Class C transistor specifically designed
for L-Band Radar pulsed driver applications.
This device is capable of operation over a wide range of pulse widths,
duty cycles, and termperatures and is capable of withstanding 3:1
output WSWR at rated RF conditions. Low RF thermal resistance and
computerized automatic wire bonding techniques ensure high
reliability and product consistency.
The MS2231 is supplied in the grounded IMPAC
hermetic
metal/ceramic package with internal input/output matching structures.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation*
(TC
≤≤ 100°°C)
270
W
IC
Device Current*
13.5
A
VCC
Collector-Supply Voltage*
32
V
TJ
Junction Temperature (Pulsed RF Operation)
250
°°C
TSTG
Storage Temperature
– 65 to + 200
°°C
Thermal Data
RTH(j-c)
Junction-Case Thermal Resistance*
0.55
°°C/W
*Applies only to rated RF amplifier operation
Features
REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
LOW THERMAL RESISTANCE
INPUT / OUTPUT MATCHING
METAL/CERAMIC HERMETIC PACKAGE
P
OUT = 100 W MIN.
G
P = 6.0 dB GAIN
RF AND MICROWAVE TRANSISTORS
L-BAND APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
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相關(guān)代理商/技術(shù)參數(shù) |
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| MS-2234 | 制造商:AD 制造商全稱:Analog Devices 功能描述:Anatomy of a Digital Isolator |
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