參數(shù)資料
型號: MS2233
元件分類: 功率晶體管
英文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封裝: 0.400 X 0.500 INCH, HERMETIC SEALED, M216, 2 PIN
文件頁數(shù): 1/5頁
文件大?。?/td> 157K
代理商: MS2233
MS2233
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:
The MS2233 is a high power transistor specifically designed
for L–Band radar pulsed output and driver applications.
This device is designed for operation under moderate pulse
width and duty cycle pulse conditions. Internal impedance
matching provides optional performance across the entire
frequency band.
ABSOLUTE MAXIMUM RATI
ABSOLUTE MAXIMUM RATINGS
NGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation* (TC
≤≤ 100°°C)
1250
W
IC
Device Current*
25
A
VCC
Collector Supply Voltage*
45
V
TJ
Junction Temperature
250
°°C
TSTG
Storage Temperature
-65 to +200
°°C
TThermal Data
hermal Data
RTH(J-C)
Junction-case Thermal Resistance
0.10
°°C/W
Features
1200 - 1400 MHz
50 VOLTS
P
OUT = 325 WATTS
G
P = 6.4 dB MINIMUM
15:1 VSWR CAPABILITY
INPUT / OUTPUT MATCHING
COMMON BASE CONFIGURATION
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
相關(guān)PDF資料
PDF描述
MS2284 L BAND, Si, NPN, RF POWER TRANSISTOR
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MS-2234 制造商:AD 制造商全稱:Analog Devices 功能描述:Anatomy of a Digital Isolator