參數(shù)資料
型號(hào): MS2091
元件分類(lèi): 功率晶體管
英文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: 0.400 X 0.400 INCH, HERMETIC SEALED, M218, 4 PIN
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 142K
代理商: MS2091
MS2091
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:
The MS2091 is an internally-matched, common base silicon bipolar
device optimized pulsed application in the 600 – 750 MHz frequency
range.
Housed in the industry standard AMPAC
metal/ceramic package,
this device uses a refractory/gold overlay die geometry for
ruggedness and long-term reliability.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation*
(TC
75
°°C)
875
W
IC
Device Current*
16.0
A
VCC
Collector-Supply Voltage*
55
V
TJ
Junction Temperature (Pulsed RF Operation)
250
°°C
TSTG
Storage Temperature
-65 to +200
°°C
Thermal Data
RTH(j-c)
Junction-Case Thermal Resistance
0.20
°°C/W
*Applies only to rated RF Amplifier Operation
Features
Refractory/Gold Metallization
Internal Input Matching
Metal/Ceramic Hermetic Package
P
OUT = 220 W Min.
G
P = 8.7 dB Gain
RF AND MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
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