參數(shù)資料
型號: MS2176
元件分類: 功率晶體管
英文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: 0.400 X 0.400 INCH, HERMETIC SEALED, M106, 2 PIN
文件頁數(shù): 1/6頁
文件大?。?/td> 201K
代理商: MS2176
MS2176
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:
The MS2176 is a gold metallized silicon NPN pulse power transistor
designed for applications requiring high peak power and low duty
cycles within the frequency range of 400 – 500 MHz.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
65
V
VCES
Collector-Emitter Voltage
65
V
VEBO
Emitter-Base Voltage
3.5
V
IC
Device Current
21.6
A
PDISS
Power Dissipation
875
W
TJ
Junction Temperature
+200
°°C
TSTG
Storage Temperature
-65 to +150
°°C
Thermal Data
RTH(j-c)
Junction-Case Thermal Resistance
0.2
°°C/W
Features
350 WATTS @ 10SEC PULSE WIDTH, 10% DUTY
CYCLE
300 WATTS @ 250SEC PULSE WIDTH 10% DUTY
CYCLE
9.5 DB MIN. GAIN
REFRACTORY GOLD METALLIZATION
EMITTER BALLASTING AND LOW THERMAL
RESISTANCE FOR RELIABILITY AND RUGGEDNESS
INFINITE VSWR CAPABILITY AT SPECIFIED
OPERATING CONDITIONS
RF AND MICROWAVE TRANSISTORS
UHF PULSED APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
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