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參數(shù)資料
| 型號(hào)： | MS1227 |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | HF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.380 INCH, PLASTIC, M113, 4 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 112K |
| 代理商： | MS1227 |
MS1227.PDF 10-28-02
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS1227
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
DESCRIPTION:
The MS1227 is a 12.5V epitaxial NPN planar transistor designed
primarily for SSB communications. This device utilizes emitter
ballasting for improved ruggedness and reliability.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
36
V
VCEO
Collector-Emitter Voltage
18
V
VEBO
Emitter-Base Voltage
4.0
V
IC
Device Current
4.5
A
PDISS
Power Dissipation
80
W
TJ
Junction Temperature
+200
°°C
TSTG
Storage Temperature
-65 to +150
°°C
Thermal Data
RTH(J-C)
Junction-case Thermal Resistance
2.2
°°C/W
Features
30 MHz
12.5 VOLTS
GOLD METALIZATION
P
OUT = 20 W MINIMUM
G
P = 15 dB
COMMON EMITTER CONFIGURATION
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MS1251 | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| MS1253 | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| MS1261 | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| MS1263 | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| MS1263 | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MS1227A | 制造商:Microsemi 功能描述:MS1227A |
| MS1227D | 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT 制造商:Microsemi 功能描述:MS1227D |
| MS122901 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| MS122903 | 制造商:MS# - MILITARY 功能描述: |
| MS122905 | 制造商:MS# - MILITARY 功能描述: |
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