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參數(shù)資料
| 型號(hào)： | MS1253 |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.380 INCH, PLASTIC, M113, 4 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 112K |
| 代理商： | MS1253 |
MS1253
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
RF & MICROWAVE TRANSISTORS
HF/VHF APPLICATIONS
DESCRIPTION
DESCRIPTION:
The MS1253 is a 12.5 V Class C epitaxial silicon NPN
transistor designed primarily for land mobile transmitter
applications. This device utilizes emitter ballasting, is
extremely stable and capable of withstanding high VSWR
under operating conditions.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
45
V
VCEO
Collector-Emitter Voltage
18
V
VEBO
Emitter-Base Voltage
3.5
V
PDISS
Power Dissipation
183
W
IC
Device Current
12.0
A
TJ
Junction Temperature
200
°°C
TSTG
Storage Temperature
-65 to +150
°°C
Thermal Data
RTH(J-C)
Thermal Resistance Junction-case
1.05
°°C/W
Features
50 MHz
12.5 VOLTS
P
OUT = 70 WATTS
G
p = 10 dB MINIMUM
COMMON EMITTER CONFIGURATION
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| MS1261 | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
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| MS1277 | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| MS1279 | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
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